Zeeman photoluminescence spectroscopy of isoelectronic beryllium pairs in silicon

被引：3

作者：

Ishikawa, T. ^{[1
]}

Sekiguchi, T. ^{[2
]}

Yoshizawa, K. ^{[1
]}

Naito, K. ^{[1
]}

Thewalt, M. L. W. ^{[2
]}

Itoh, K. M. ^{[1
]}

机构：

[1] Keio Univ, Sch Fundamental Sci & Technol, Kohoku Ku, Yokohama, Kanagawa 2238522, Japan

[2] Simon Fraser Univ, Dept Phys, Burnaby, BC V5A 1S6, Canada

来源：

SOLID STATE COMMUNICATIONS | 2010年 / 150卷 / 37-38期

关键词：

Semiconductors; Impurities in semiconductors; Optical properties; Luminescence; BOUND EXCITONS; ELECTRONIC-STRUCTURE; HYDROSTATIC-PRESSURE; ABSORPTION-SPECTRUM; ACCEPTORS; EXCITATION; DEFECTS; DONORS;

D O I：

10.1016/j.ssc.2010.07.004

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Isoelectronic beryllium (Be) pair centers in silicon have been studied by photoluminescence spectroscopy under a magnetic field. The photoluminescence of the bound-exciton recombination at this center shows that the number of Zeeman split peaks is the smallest for the magnetic field applied along a < 100 > direction. This result provides direct evidence that the Be pairs orient themselves in < 111 > directions. The g values of the hole and electron in this bound exciton determined by fitting of the Zeeman diagrams support the shallow acceptor character of this isoelectronic center. (C) 2010 Elsevier Ltd. All rights reserved.

引用

页码：1827 / 1830

页数：4

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