Supercritical fluid-enhanced IFVD quantum well intermixing for the regrowth-free photonic integration of EAM and SOA

被引：5
作者：
Chen, Yang-Jeng [1 ,2 ]
Chen, Rih-You [1 ,2 ]
Shiu, Chih-Cheng [3 ]
Hsu, Wen-Kuan [1 ,2 ]
Lin, Wei-Chen [1 ,2 ]
Lin, Yu-Hung [1 ,2 ]
Chang, Ting-Chang [3 ]
Chiu, Yi-Jen [1 ,2 ]
机构：
[1] Natl Sun Yat Sen Univ, Inst Electroopt Engn, Kaohsiung 804, Taiwan
[2] Natl Sun Yat Sen Univ, Dept Photon, Kaohsiung 804, Taiwan
[3] Natl Sun Yat Sen Univ, Dept Phys, Kaohsiung 804, Taiwan
来源：
OPTICAL MATERIALS EXPRESS | 2018年 / 8卷 / 09期
关键词：
MONOLITHIC INTEGRATION; LASERS; LAYER; INP;
D O I：
10.1364/OME.8.002592
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
In this study, we propose and demonstrate the enhancement of impurity-free vacancy diffusion (IFVD) quantum well intermixing (QWI) using supercritical fluid (SCF) treatment for photonic integration. Using an InGaAsP-based multiple quantum well (MQW) template for local bandgap engineering, SCF CO2 with H2O2 on a patterned SiOx capping layer could lower the QWI temperature to get a constant wavelength blueshift. Higher oxygen concentration was found in SiOx through high diffusivities and pressures of SCF and dehydration, enabling highly activated Ga2O3 reactions for more vacancies. Additionally, different schemes of semiconductor optical amplifier (SOA)-integrated electroabsorption modulators (EAM) were fabricated. SCF treatment could realize a 9- and 6-dB improvement in extinction ratio and gain, respectively, and then high-speed 45Gb/s modulation, greatly reducing the common issue of p-type dopant (zinc) diffusion during QWI. (C) 2018 Optical Society of America under the terms of the OSA Open Access Publishing Agreement.
引用
收藏
页码：2592 / 2599
页数：8
相关论文
共 21 条
[1]   Low-energy ion-implantation-induced quantum-well intermixing [J].
Aimez, V ;
Beauvais, J ;
Beerens, J ;
Morris, D ;
Lim, HS ;
Ooi, BS .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2002, 8 (04) :870-879
[2]  
Aleahmad P, 2015, MATER RES EXPRESS, V2, P8
[3]   A COMPARISON OF CARBON AND ZINC DOPING IN GAAS/ALGAAS LASERS BANDGAP-TUNED BY IMPURITY-FREE VACANCY DISORDERING [J].
AYLING, SG ;
BRYCE, AC ;
GONTIJO, I ;
MARSH, JH ;
ROBERTS, JS .
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1994, 9 (11) :2149-2151
[4]  
Chen Y.-J., 2017, IEEE PHOT C IPC
[5]   Suppression of quantum well intermixing in GaAs/AlGaAs laser structures using phosphorus-doped SiO2 encapsulant layer [J].
Cusumano, P ;
Ooi, BS ;
Helmy, AS ;
Ayling, SG ;
Bryce, AC ;
Marsh, JH ;
Voegele, B ;
Rose, MJ .
JOURNAL OF APPLIED PHYSICS, 1997, 81 (05) :2445-2447
[6]   Optical losses in InGaAsP/InP QW intermixed waveguides for ZrO2 cap with and without F implantation [J].
Das, Sona ;
Kumar, Raman ;
Bhowmick, Tathagata ;
Das, Utpal .
OPTICAL AND QUANTUM ELECTRONICS, 2016, 48 (01) :1-7
[7]   InGaAsP/InP QW Impurity Free Intermixing for Variable ZrO2 Cap Thickness [J].
Das, Sona ;
Malik, Dharmander ;
Bhowmick, Tathagata ;
Das, Utpal ;
Das, Tushar D. .
IEEE PHOTONICS TECHNOLOGY LETTERS, 2015, 27 (14) :1511-1514
[8]   Influence of low-temperature chemical vapor deposited SiO2 capping layer porosity on GaAs/AlGaAs quantum well intermixing [J].
Deenapanray, PNK ;
Tan, HH ;
Fu, L ;
Jagadish, C .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2000, 3 (04) :196-199
[9]   Silane flow rate dependence of SiOx cap layer induced impurity-free intermixing of GaAs/AlGaAs quantum wells [J].
Deenapanray, PNK ;
Tan, HH ;
Cohen, MI ;
Gaff, K ;
Petravic, M ;
Jagadish, C .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2000, 147 (05) :1950-1956
[10]   Effect of stress on impurity-free quantum well intermixing [J].
Deenapanray, PNK ;
Jagadish, C .
ELECTROCHEMICAL AND SOLID STATE LETTERS, 2001, 4 (02) :G11-G13
123