An Inkjet-Printed, Ultralow Voltage, Flexible Organic Field Effect Transistor

被引：58

作者：

Conti, Silvia ^{[1
]}

Lai, Stefano ^{[1
]}

Cosseddu, Piero ^{[1
]}

Bonfiglio, Annalisa ^{[1
]}

机构：

[1] Univ Cagliari, Dept Elect & Elect Engn, Piazza Armi, I-09123 Cagliari, Italy

来源：

ADVANCED MATERIALS TECHNOLOGIES | 2017年 / 2卷 / 02期

关键词：

THIN-FILM TRANSISTORS; POLYMER GATE DIELECTRICS; HIGH-PERFORMANCE; ELECTRICAL-PROPERTIES; AMORPHOUS-SILICON; ELECTRONICS; DEVICES; OFETS;

D O I：

10.1002/admt.201600212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A very simple procedure for fabricating inkjet-printed organic field effect transistors (OFETs) is reported. A reliable process for the deposition of a thin and uniform polymeric dielectric film of poly(4-vinylphenol) (PVP) is established as a key factor for obtaining high performance devices operating at low voltages. To this aim, ink formulations, printing parameters, and crosslinking processes are investigated. Morphological characterization of the fabricated films by means of contact profilometry and atomic force microscopy is provided, as well as capacitive measurements proving ideal dielectric properties. OFET structures based on PVP gate dielectric are reported: in particular, inkjet-printed devices operated at voltages below 1 V with remarkable transistor performances such as high charge carrier mobility and low subthreshold swing are presented.

引用

页数：8

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