The electronic properties of graphene nanoribbons with boron/nitrogen codoping

被引:41
作者
Wang, Zhiyong [1 ]
Hu, Huifang [1 ]
Zeng, Hui [2 ]
机构
[1] Hunan Univ, Coll Phys & Microelect Sci, Changsha 410082, Hunan, Peoples R China
[2] Yangtze Univ, Coll Phys Sci & Technol, Jinzhou 434023, Hubei, Peoples R China
关键词
ab initio calculations; band structure; boron; density functional theory; electrical conductivity transitions; electronic structure; elemental semiconductors; Fermi level; graphene; magnetoelectronics; nanostructured materials; nitrogen; semiconductor doping; HALF-METALLICITY;
D O I
10.1063/1.3455884
中图分类号
O59 [应用物理学];
学科分类号
摘要
The electronic properties of graphene nanoribbons with boron/nitrogen codoping at different sites are investigated by performing first-principles calculations based on density functional theory. The calculated results show that the band structures of these doping configurations have distinctly changed around the Fermi level with gradual increasing the distance between nitrogen atom and boron atom. Doping positions regulate the electronic structure of the graphene nanoribbons. Interestingly, our results exhibit both semiconducting and half-metallic behavior in response to the boron/nitrogen codoping at different sites without an applied electronic field, opening a possibility in spintronics device application. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3455884]
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页数:3
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