Nanoscale Scanning Microwave Impedance Microscopy on Advanced Functional Materials

被引：0

作者：

Ren, Yuan ^{[1
]}

Wu, Di ^{[1
]}

Liu, Yingnan ^{[1
]}

Wu, Xiaoyu ^{[1
]}

Lai, Keji ^{[1
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

来源：

2015 45TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2015年

关键词：

Scanning microwave microscopy; nanoscale imaging; near field; shielded cantilever probe; advanced materials; FIELD-EFFECT TRANSISTORS; LAYERS;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present the design and experimental results of near-field scanning microwave impedance microscopy (MIM). By sending the excitation 1GHz signal to a shielded cantilever probe and detecting the reflected signal, the MIM electronics measure the real and imaginary components of the tip-sample admittance to form the corresponding MIM-Re and MIM-Im images. The system can be installed on commercial atomic-force microscope platforms or cryogenic chambers. Nanoscale electrical imaging on advanced materials, such as monolayer MoS2 flakes, BaTiO3-Ge heterostructures, and ZnO field-effect transistors, have been obtained using the near-field microwave microscope.

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页码：650 / 653

页数：4

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