SYNTHESIS AND ELECTRICAL CHARACTERIZATION OF ALUMINIUM DOPED ZINC OXIDE THIN FILMS

被引：0

作者：

Vanmathi, M. ^{[1
]}

Mohamed, I ^{[1
]}

Marikkannan, S. K. ^{[2
]}

Venkateswarlu, M. ^{[3
]}

机构：

[1] BS Abdur Rahman Crescent Inst Sci & Technol, Dept Elect & Commun, Chennai 600048, Tamil Nadu, India

[2] VIT Univ, Sch Mech Bldg & Sci, Chennai 600127, Tamil Nadu, India

[3] Amara Raja Batteries Ltd, Res & Engn Ctr, Karkambadi 517520, Andhra Pradesh, India

来源：

JOURNAL OF OVONIC RESEARCH | 2017年 / 13卷 / 06期

关键词：

ZnO; thin films; Optical Properties; Structure Properties;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Al doped ZnO (AZO) thin films for different compositions were deposited by using sol-gel technique. Thin film preparation, structural, optical and electrical properties have been studied. Investigations on the effect of structural, optical and electrical properties revealed the relationship that exists between these properties and the film lattice defect distribution. XRD studies showed that AZO thin films a preferred orientation (002) direction, and decrease in the lattice distance indicating a less defected structure. The electrical and optical properties of AZO films have reached a good level. Films with electrical resistivity as low as 1.84 x 10(-3) Omega cm and 90 % optical transmittance in the visible region, which is suitable for gas sensing applications. It is found that electrical resistivity was due to increase in concentration of donor atoms.

引用

页码：345 / 349

页数：5

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