RHEED observation of BaTiO3 thin films grown by MBE

被引：10

作者：

Yoneda, Y

Sakaue, K

Terauchi, H

机构：

[1] Japan Atom Energy Res Inst, Dept Synchrotron Radiat Fac, Sayo, Hyogo 6795148, Japan

[2] Kwansei Gakuin Univ, Dept Phys, Sanda, Hyogo 6691337, Japan

来源：

SURFACE SCIENCE | 2003年 / 529卷 / 03期

关键词：

reflection high-energy electron diffraction (RHEED); x-ray scattering; diffraction; and reflection; surface relaxation and reconstruction; surface structure; morphology; roughness; and topography; growth; molecular beam epitaxy;

D O I：

10.1016/S0039-6028(03)00361-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Ferroelectric BaTiO3 thin films with a thickness of 10 monolayers (ML) were epitaxially grown on SrTiO3(001) substrates by very slow deposition using molecular beam epitaxy (MBE). The investigations were carried out by two growth methods: (i) codeposition and (ii) alternate deposition of the metal elements in an oxygen atmosphere. In situ observation of reflection high-energy electron diffraction confirmed that an epitaxial cube-on-cube structure was prepared. After the deposition, X-ray diffraction measurements were carried out. The 10-ML-thick BaTiO3 films were highly c-axis oriented single crystals with good film quality. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

页码：283 / 287

页数：5

共 14 条

[1] ATOMIC LAYER GROWTH OF OXIDE THIN-FILMS WITH PEROVSKITE-TYPE STRUCTURE BY REACTIVE EVAPORATION [J].