X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure

被引：0

作者：

Kazan, Oguz ^{[1
]}

Kocer, Fatih ^{[2
]}

Civi, Ozlem Aydin ^{[1
]}

机构：

[1] Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey

[2] Analog Devices Inc, Chelmsford, MA USA

来源：

2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2018年

关键词：

gallium nitride; HEMTs; low-noise amplifiers; MMICs; noise figure; scattering parameters;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 x 1.3 mm(2) (3.6 mm(2)) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 mu m Power GaN/SiC HEMT process by WIN Semiconductor.

引用

页码：1202 / 1204

页数：3

共 50 条

[31] Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier [J].

Schwindt, RS ;

Kumar, V ;

Aktas, O ;

Lee, JW ;

Adesida, I .

2004 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2004: 26TH ANNIVERSARY: COMPOUNDING YOUR CHIPS IN MONTEREY, 2004, :201-203

[32] Sub-mW Operation of InP HEMT X-band Low-Noise Amplifiers for Low Power Applications [J].

Lin, C. H. ;

Mei, X. B. ;

Chou, Y. C. ;

Lee, L. S. ;

Yang, J. M. ;

Nishimoto, M. Y. ;

Liu, P. H. ;

To, R. ;

Cavus, A. ;

Tsai, R. ;

Wojtowicz, M. ;

Lai, R. .

2009 ANNUAL IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2009 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2009, 2009, :133-136

[33] A Wideband E/W-Band Low-Noise Amplifier MMIC in a 70-nm Gate-Length GaN HEMT Technology [J].

Thome, Fabian ;

Brueckner, Peter ;

Leone, Stefano ;

Quay, Ruediger .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 2022, 70 (02) :1367-1376

[34] A Reconfigurable S-/X-Band GaN MMIC Power Amplifier [J].

Kang, Li ;

Chen, Wenhua ;

Wu, Aimin .

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2022, 32 (06) :547-550

[35] Stability Analysis and Demonstration of an X-band GaN Power Amplifier MMIC [J].

van Heijningen, M. ;

de Hek, A. P. ;

van Vliet, F. E. ;

Dellier, S. .

2016 11TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2016, :221-224

[36] High-Linearity and Low-Noise Tunable C/X-Band GaN Filters for Robust Highly Integrated Front-Ends [J].

Malmqvist, Robert ;

Khedri, Morteza ;

Jonsson, Rolf .

2024 19TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE, EUMIC 2024, 2024, :323-326

[37] Cryogenic MMIC Low-Noise Amplifiers for V-band [J].

Varonen, Mikko ;

Samoska, Lorene ;

Kangaslahti, Pekka ;

Fung, Andy ;

Gawande, Rohit ;

Soria, Mary ;

Peralta, Alejandro ;

Lin, Robert ;

Lai, Richard ;

Mei, Xiaobing ;

Sarkozy, Stephen .

2017 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2017, :172-175

[38] An 88∼100 GHz High-Robustness Low-Noise Amplifier with 3.0∼3.5 dB Noise Figure Using 0.1μm GaN-on-SiC process [J].

Chen, Yan ;

Wang, Weibo ;

Chen, Zhongfei ;

Guo, Fangjin ;

Wang, Guangnian .

2022 IEEE MTT-S INTERNATIONAL WIRELESS SYMPOSIUM, IWS, 2022,

[39] Ultra-low-power X-band SiGe HBT low-noise amplifiers [J].

Roux, P. ;

Baeyens, Y. ;

Weiner, J. ;

Chen, Y. K. .

2007 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-6, 2007, :1779-+

[40] A Ku-band CMOS low-noise amplifier [J].

Deng, Kuo-Liang ;

Tsai, Ming-Da ;

Lin, Chin-Shen ;

Lin, Kun-You ;

Wang, Huei ;

Wang, S. H. ;

Lien, W. Y. ;

Chern, John G. J. .

2005 IEEE INTERNATIONAL WORKSHOP ON RADIO-FREQUENCY INTEGRATION TECHNOLOGY, PROCEEDINGS: INTEGRATED CIRCUITS FOR WIDEBAND COMMUNICATION AND WIRELESS SENSOR NETWORKS, 2005, :183-186

← 1 2 3 4 5 →