X-Band Robust GaN Low-Noise Amplifier MMIC with sub 2 dB Noise Figure

被引：0

作者：

Kazan, Oguz ^{[1
]}

Kocer, Fatih ^{[2
]}

Civi, Ozlem Aydin ^{[1
]}

机构：

[1] Middle East Tech Univ, Dept Elect & Elect Engn, Ankara, Turkey

[2] Analog Devices Inc, Chelmsford, MA USA

来源：

2018 48TH EUROPEAN MICROWAVE CONFERENCE (EUMC) | 2018年

关键词：

gallium nitride; HEMTs; low-noise amplifiers; MMICs; noise figure; scattering parameters;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper presents a low-noise amplifier (LNA) operating between 8-11 GHz. Measurement results show that the LNA has a gain of more than 20 dB while achieving a noise figure of less than 2 dB. The three stage topology achieves high linearity, providing an OIP3 of 29 dBm at 0.6 W power dissipation. The robustness tests show that the circuit survives to at least 2.5 W (34 dBm) input power. With a size of just 2.8 x 1.3 mm(2) (3.6 mm(2)) the presented LNA is compact when compared to the state of the art. The circuit is realized using the 0.25 mu m Power GaN/SiC HEMT process by WIN Semiconductor.

引用

页码：1202 / 1204

页数：3

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