Enhanced Power Factor and Figure of Merit of Cu2ZnSnSe4-Based Thermoelectric Composites by Ag Alloying

被引:23
作者
Mehmood, Fahad [1 ]
Wang, Hongchao [1 ]
Su, Wenbin [1 ]
Khan, Mahwish [1 ]
Huo, Taichang [1 ]
Chen, Tingting [1 ]
Chebanova, Galina [2 ]
Romanenko, Anatoly [2 ]
Wang, Chunlei [1 ]
机构
[1] Shandong Univ, Sch Phys, State Key Lab Crystal Mat, Jinan 250100, Peoples R China
[2] Russian Acad Sci, Inst Inorgan Chem, Siberian Branch, Novosibirsk 630090, Russia
基金
国家重点研发计划; 俄罗斯基础研究基金会;
关键词
CRYSTAL-STRUCTURE; HIGH-PERFORMANCE; TRANSPORT-PROPERTIES; NANOCRYSTALS; BULKS;
D O I
10.1021/acs.inorgchem.1c00079
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
The quaternary chalcogenide composites Cu2ZnSn1-xAgxSe4 (0 <= x <= 0.075) have been successfully synthesized by high-temperature melting and annealing followed by hot-pressing. The phase structure of the bulk sample has been analyzed by powder X-ray diffraction and Rietveld refinement combined with Raman spectroscopy to confirm Cu2ZnSnSe4 as the main phase with ZnSe and Cu5Zn8 secondary phases. The thermoelectric properties of all specimens have been investigated in the temperature range of 300-700 K. The replacement of Sn by Ag significantly enhances the electrical transport properties by providing extra charge carriers. The tremendous reduction in electrical resistivity enhances the power factor, and a maximum power factor of 804 mu W K-2 M-1 is achieved at 673 K for the specimen with 5% Ag content. Furthermore, increased point defects increase phonon scattering, resulting in reduced thermal conductivity. The combined effect of improved power factor and suppressed thermal conductivity provides a good boost to the dimensionless figure of merit. The maximum figure of merit of zT = 0.25 has been achieved at 673 K for Cu2ZnSn0.95Ag0.05Se4, which is 2.5 times the value of the parent sample.
引用
收藏
页码:3452 / 3459
页数:8
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