Observation of Hydrogen-Related Defect in Subgap Density of States and Its Effects Under Positive Bias Stress in Amorphous InGaZnO TFT

被引：27
作者：
Jang, Jun Tae [1 ]
Ko, Daehyun [1 ]
Choi, Sung-Jin [1 ]
Kim, Dong Myong [1 ]
Kim, Dae Hwan [1 ]
机构：
[1] Kookmin Univ, Sch Elect Engn, Seoul 02707, South Korea
来源：
IEEE ELECTRON DEVICE LETTERS | 2021年 / 42卷 / 05期
基金：
新加坡国家研究基金会;
关键词：
Thin film transistors; Logic gates; Iron; Object recognition; Mathematical model; Fitting; Stress; a-IGZO TFT; low-temperature ALD; hydrogen; density of states; PBS-induced instability; THIN-FILM TRANSISTORS; GATE;
D O I：
10.1109/LED.2021.3066624
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In amorphous oxide semiconductors, hydrogen-related defects have been unable to be observed from the electrical characteristics of thin-film transistors (TFTs) in comparison to oxygen-related defects. Here, the hydrogen-related defect is observed as the Gaussian distributed density of states (DoS) in E-C - 0.6 eV level by using the photoresponse of C-V characteristics in In-Ga-Zn-O (IGZO) TFTs. Coupled with X-ray photoelectron spectroscopy (XPS), it is identified as hydroxide ion (OH-), which both passivates oxygen vacancy defects and supplies the carriers as shallow donors. Furthermore, the evolution of DoS under positive bias stress and its origin are comparatively investigated for IGZO TFTs with three types of gate insulators (GIs), such as low-temperature atomic layered deposited Al2O3, thermally grown SiO2, and double-layered GIs.
引用
收藏
页码：708 / 711
页数：4
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