Capacitance changes in neutron irradiated n-type silicon: The flux effect

被引：3
|
作者：
Novoselnik, B. [2 ]
Pilipovic, M. [2 ]
Jacimovic, R. [3 ]
Pivac, B. [1 ]
Slunjski, R. [1 ]
Capan, I. [1 ]
机构：
[1] Rudjer Boskovic Inst, Zagreb 10000, Croatia
[2] Fac Elect Engn & Comp, Zagreb 10000, Croatia
[3] Jozef Stefan Inst, Ljubljana 1000, Slovenia
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2010年 / 268卷 / 15期
关键词：
Silicon; Irradiation; Neutron; Flux; Capacitance; CARRIER REMOVAL; ELECTRON; PROTON; INP;
D O I：
10.1016/j.nimb.2010.04.017
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
The influence of fast neutron flux on radiation-induced capacitance changes in heavily irradiated n-type Si has been studied by means of capacitance techniques. We have observed two regimes; flux-dependent and -independent for the case of high and low flux irradiation, respectively. A model that describes changes in the thermally stimulated capacitance as a function of time of irradiation has been proposed. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：2400 / 2402
页数：3
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