Epitaxial Brownmillerite Oxide Thin Films for Reliable Switching Memory

被引：78

作者：

Acharya, Susant K. ^{[1
,2
]}

Nallagatla, Raveendra Venkata ^{[1
,2
]}

Togibasa, Octolia ^{[1
,2
]}

Lee, Bo W. ^{[1
,2
]}

Liu, Chunli ^{[1
,2
]}

Jung, Chang U. ^{[1
,2
]}

Park, Bae Ho ^{[3
]}

Park, Ji-Yong ^{[4
,5
]}

Cho, Yunae ^{[6
]}

Kim, Dong-Wook ^{[6
]}

Jo, Janghyun ^{[7
]}

Kwon, Deok-Hwang ^{[7
]}

Kim, Miyoung ^{[7
]}

Hwang, Cheol Seong ^{[8
,9
]}

Chae, Seung C. ^{[10
]}

机构：

[1] Hankuk Univ Foreign Studies, Dept Phys, Yongin 449791, South Korea

[2] Hankuk Univ Foreign Studies, Oxide Res Ctr, Yongin 449791, South Korea

[3] Konkuk Univ, Dept Phys, Div Quantum Phases & Devices, Seoul 143791, South Korea

[4] Ajou Univ, Dept Phys, Suwon 443749, South Korea

[5] Ajou Univ, Dept Energy Syst Res, Suwon 443749, South Korea

[6] Ewha Womans Univ, Dept Phys, Seoul 120750, South Korea

[7] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151747, South Korea

[8] Seoul Natl Univ, Dept Mat Sci & Engn, Seoul 151744, South Korea

[9] Seoul Natl Univ, Inter Univ, Semicond Res Ctr, Seoul 151744, South Korea

[10] Seoul Natl Univ, Dept Phys Educ, Seoul 151748, South Korea

来源：

ACS APPLIED MATERIALS & INTERFACES | 2016年 / 8卷 / 12期

基金：

新加坡国家研究基金会;

关键词：

brownmillerite structure; SrFeOx thin film; atomically smooth surface; RRAM; uniform switching parameters; IMPROVED UNIFORMITY; MECHANISMS; RESISTANCE; NANOFILAMENTS; CONDUCTIVITY; TEMPERATURE; STABILITY; EVOLUTION; BEHAVIOR; DEVICES;

D O I：

10.1021/acsami.6b00647

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Resistive switching memory, which is mostly based on polycrystalline thin films, suffers from wide distributions in switching parameters including set voltage, reset voltage, and resistance in their low- and high-resistance states. One of the most commonly used methods to overcome this limitation is to introduce inhomogeneity. By contrast, in this paper, we obtained uniform resistive switching parameters and sufficiently low forming voltage by maximizing the uniformity of an epitaxial thin film. To achieve this result, we deposited an SrFeOx/SrRuO3 heteroepitaxial structure onto an SrTiO3 (001) substrate by pulsed laser deposition, and then we deposited an Au top electrode by electron-beam evaporation. This device exhibited excellent bipolar resistance switching characteristics, including a high on/off ratio, narrow distribution of key switching parameters, and long data retention time. We interpret these phenomena in terms of a local, reversible phase transformation in the SrFeOx film between brownmillerite and perovskite structures. Using the brownmillerite structure and atomically uniform thickness of the heteroepitaxial SrFeOx thin film, we overcame two major hurdles in the development of resistive random-access memory devices: high forming voltage and broad distributions of switching parameters.

引用

页码：7902 / 7911

页数：10

共 63 条

[1] A journey towards reliability improvement of TiO2 based Resistive Random Access Memory: A review [J].