Fine-tuning of GaAs photonic crystal cavities by digital etching

被引：10

作者：

Suenner, T. ^{[1
]}

Herrmann, R. ^{[1
]}

Loeffler, A. ^{[1
]}

Kamp, M. ^{[1
]}

Forchel, A. ^{[1
]}

机构：

[1] Univ Wurzburg, D-97074 Wurzburg, Germany

来源：

MICROELECTRONIC ENGINEERING | 2007年 / 84卷 / 5-8期

关键词：

photonic crystal cavities; post-fabrication technique; etching;

D O I：

10.1016/j.mee.2007.01.064

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical cavities with quality factors above 2 x 1 05 were realized based on photonic crystal heterostructures in a GaAs membrane. The growth of natural oxide on these structures was investigated by monitoring the resonance wavelength of the cavity over time. A logarithmic time dependence of the oxide thickness was found. Combining surface oxidation over a defined time interval and subsequent oxide removal using a wet chemical treatment, tuning of the resonance wavelength in steps of less than 2 nm was achieved. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：1405 / 1407

页数：3

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