Growth of SiO2 on InP substrate by liquid phase deposition

被引：8

作者：

Lei, Po Hsun ^{[1
]}

Yang, Chyi Da ^{[2
]}

机构：

[1] Natl Formosa Univ, Inst Electroopt & Mat Sci, Huwei 623, Yun Lin, Taiwan

[2] Natl Kaohsiung Marine Univ, Dept Microelect Engn, Kaohsiung 811, Taiwan

来源：

APPLIED SURFACE SCIENCE | 2010年 / 256卷 / 12期

关键词：

Liquid phase deposition (LPD); Indium phosphorous (InP); Hydrochloric acid (HCl); Silicon dioxide (SiO2); SILICON DIOXIDE FILMS; GALLIUM-ARSENIDE; PLASMA; LPD;

D O I：

10.1016/j.apsusc.2010.01.021

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We have grown silicon dioxide (SiO2) on indiumphosphorous (InP) substrate by liquid phase deposition (LPD) method. With inserting InP wafer in the treatment solution composed of SiO2 saturated hydrofluorosilicic acid (H2SiF6), 0.1 Mboric acid (H3BO3) and 1.74 M diluted hydrochloric acid (HCl), the maximum deposition rate and refractive index for the as-grown LPD-SiO2 film were about 187.5 angstrom/h and 1.495 under the constant growth temperature of 40 degrees C. The secondary ion mass spectroscope (SIMS) and energy dispersive X-ray (EDX) confirmed that the elements of silicon, oxygen, and chloride were found in the as-grown LPD-SiO2 film. On the other hand, the effects of treatment solution incorporated with the hydrogen peroxide (H2O2) that can regulate the concentration of OH ion were also shown in this article. The experimental results represented that the deposition rate decreases with increasing the concentration of hydrogen peroxide due to the reduced concentration of SiO2 saturated H2SiF6 in treatment solution. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：3757 / 3760

页数：4

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