Electric field effect on the magnetic properties of III-V ferromagnetic semiconductor (In, Mn)As and ((Al),Ga,Mn)As

被引：9

作者：

Chiba, D ^{[1
]}

Yamanouchi, M ^{[1
]}

Matsukura, F ^{[1
]}

Abe, E ^{[1
]}

Ohno, Y ^{[1
]}

Ohtani, K ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Elect Commun Res Inst, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF SUPERCONDUCTIVITY | 2003年 / 16卷 / 01期

基金：

日本学术振兴会;

关键词：

(In; Mn)As; (Ga; field-effect transistors; carrier-induced ferromagnetism;

D O I：

10.1023/A:1023238229806

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have investigated the magnetotransport properties of field-effect transistors (FET) having a III-V ferromagnetic semiconductor channel layer. One can control not only the ferromagnetic transition temperature T-C but also the magnetization and the coercive force of (In,Mn) As channel layers isothermally and reversibly by gate electric fields. A small change of the magnetization upon application of gate electric fields is also observed in FETs with a (Ga,Mn) As channel. Results on a (Al,Ga,Mn) As channel FET are also presented.

引用

页码：179 / 182

页数：4

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