Theory of non-Markovian gain in strained-layer quantum-well lasers with many-body effects

被引:38
作者
Ahn, D [1 ]
机构
[1] Univ Seoul, Dept Elect Engn, Seoul 130743, South Korea
关键词
gain; many-body; non-Markovian; strained-layer quantum-well laser;
D O I
10.1109/3.658731
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A non-Markovian model for the optical gain of strained-layer quantum-well lasers is developed taking into account the valence-band mixing, strain effects, many-body effects, and the non-Markovian relaxation using the time-convolutionless reduced-density operator formalism given in previous papers for an arbitrary driven system coupled to a stochastic reservoir. Many-body effects are taken into account within the time-dependent Hartree-Fock approximation and the valence-band structure is calculated from the 6 x 6 Luttinger-Kohn Hamiltonian. The optical gain with Coulomb (or excitonic) enhancement is derived by integrating the equation of motion for the interband polarization. It is shown that the vertex function for the interband polarization can be obtained exactly without relying on the Fade approximation. As a numerical example, an InxGa1-xAs-InP quantum well (QW) is chosen for its wide application in optical communication systems. It is predicted that the Coulomb enhancement of gain is pronounced in the cases of compressive and unstrained QW's while it is negligible in the case of tensile strained QW.
引用
收藏
页码:344 / 352
页数:9
相关论文
共 33 条
[1]   THEORY OF OPTICAL GAIN IN STRAINED-LAYER QUANTUM-WELLS WITHIN THE 6X6 LUTTINGER-KOHN MODEL [J].
AHN, D ;
YOON, SJ ;
CHUANG, SL ;
CHANG, CS .
JOURNAL OF APPLIED PHYSICS, 1995, 78 (04) :2489-2497
[2]   Non-Markovian gain of a quantum-well laser with many-body effects [J].
Ahn, D .
APPLIED PHYSICS LETTERS, 1996, 69 (17) :2498-2500
[3]  
AHN D, 1995, IEEE J SEL TOP QUANT, V1, P301, DOI 10.1109/2944.401209
[4]   Optical gain of a quantum-well laser with non-markovian relaxation and many-body effects [J].
Ahn, D .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1996, 32 (06) :960-965
[5]   TIME-CONVOLUTIONLESS REDUCED-DENSITY OPERATOR-THEORY OF AN ARBITRARY DRIVEN SYSTEM COUPLED TO A STOCHASTIC RESERVOIR .2. OPTICAL GAIN AND LINE-SHAPE FUNCTION OF A DRIVEN SEMICONDUCTOR [J].
AHN, D .
PHYSICAL REVIEW B, 1995, 51 (04) :2159-2166
[6]   TIME-CONVOLUTIONLESS REDUCED-DENSITY-OPERATOR THEORY OF AN ARBITRARY DRIVEN SYSTEM COUPLED TO A STOCHASTIC RESERVOIR - QUANTUM KINETIC-EQUATIONS FOR SEMICONDUCTORS [J].
AHN, D .
PHYSICAL REVIEW B, 1994, 50 (12) :8310-8318
[7]  
AHN D, IN PRESS PROG QUANTU
[8]   PHASE MEMORY OF THE ELECTRONIC POLARIZATION IN TRANSIENT NONLINEAR OPTICAL-SPECTRA OF GALLIUM-ARSENIDE AT 2 EV [J].
BOHNE, G ;
SURE, T ;
ULBRICH, RG ;
SCHAFER, W .
PHYSICAL REVIEW B, 1990, 41 (11) :7549-7558
[9]   MODELING OF STRAINED-QUANTUM-WELL LASERS WITH SPIN-ORBIT-COUPLING [J].
CHANG, CS ;
CHUANG, SL .
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :218-229
[10]  
CHANG CS, IN PRESS IEEE SELECT