A fully matched Ku-band 9W PHEMT MMIC high power amplifier

被引：0
|
作者：
Lin, C. H. [1 ]
Liu, H. Z. [1 ]
Chu, C. K. [1 ]
Huang, H. K. [1 ]
Wang, Y. H. [1 ]
Liu, C. C. [2 ]
Chang, C. H. [2 ]
Wu, C. L. [2 ]
Chang, C. S. [2 ]
机构：
[1] Natl Cheng Kung Univ, Dept Elect Engn, Inst Microelect, Tainan 701, Taiwan
[2] Transcom Inc, Tainan 741, Taiwan
来源：
IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM - 2006 IEEE CSIC SYMPOSIUM, TECHNICAL DIGEST 2006 | 2006年
关键词：
Ku-band; MMIC; power amplifier; PHEMT;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A 9 watt AlGaAs/InGaAs/GaAs PHEMT MMIC power amplifier for ku band applications is presented. This two-stage amplifier with chip size of 11.12 mm(2) (4.52 mm x 2.46 mm) is designed to fully match 50 ohm input and output impedance. With 8 volts and 900 mA DC bias condition, 12 dB small signal gain, 39.5 dBm (9 watt) saturated output power with 30% power-added efficiency from 14 to 14.2 GHz can be achieved. This high power amplifier also achieved the best power densities (809 mW/mm(2)) at ku band reported to date.
引用
收藏
页码：165 / 168
页数：4
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