Energetics of extrinsic defects in Si and their role in nonequilibrium dopant diffusion

被引：0

作者：

Cristiano, F ^{[1
]}

Colombeau, B ^{[1
]}

Claverie, A ^{[1
]}

机构：

[1] CNRS, CEMES, F-31055 Toulouse 4, France

来源：

DEFECTS AND DIFFUSION IN SEMICONDUCTORS | 2000年 / 183-1卷

关键词：

transient enhanced diffusion; extended defects; ion implantation; TEM;

D O I：

10.4028/www.scientific.net/DDF.183-185.199

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper, we discuss the mechanisms by which small clusters evolve through "magic" sizes into {113} defects and then, at sufficiently high dose levels, transform into dislocation loops of two types. This ripening process is mediated by the interchange of free Si(int)s between different extended defects, leading to a decrease of their formation energy. A detailed analysis of extrinsic defect energetics has been carried out and it is shown that Ostwald ripening is the key concept for understanding and simulating extrinsic defect kinetics and thus predict TED evolution.

引用

收藏

页码：199 / 206

页数：8

相关论文

共 18 条

[1] Ostwald ripening of end-of-range defects in silicon [J].

Bonafos, C ;

Mathiot, D ;

Claverie, A .

JOURNAL OF APPLIED PHYSICS, 1998, 83 (06) :3008-3017

[2]

CLAVERIE A, 2000, IN PRESS MAT SCI APR

[3] Transient enhanced diffusion in preamorphized silicon: the role of the surface [J].

Cowern, NEB ;

Alquier, D ;

Omri, M ;

Claverie, A ;

Nejim, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1999, 148 (1-4) :257-261

[4] Energetics of self-interstitial clusters in Si [J].

Cowern, NEB ;

Mannino, G ;

Stolk, PA ;

Roozeboom, F ;

Huizing, HGA ;

van Berkum, JGM ;

Cristiano, F ;

Claverie, A ;

Jaraíz, M .

PHYSICAL REVIEW LETTERS, 1999, 82 (22) :4460-4463

[5]

CRISTIANO F, 2000, IN PRESS J APPL JUN

[6] Planar self-interstitial in silicon [J].

De Souza, MM ;

Ngw, CK ;

Shishkin, M ;

Narayanan, EMS .

PHYSICAL REVIEW LETTERS, 1999, 83 (09) :1799-1801

[7] IDENTIFICATION OF EOR DEFECTS DUE TO THE REGROWTH OF AMORPHOUS LAYERS CREATED BY ION-BOMBARDMENT [J].

DEMAUDUIT, B ;

LAANAB, L ;

BERGAUD, C ;

FAYE, MM ;

MARTINEZ, A ;

CLAVERIE, A .

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1994, 84 (02) :190-194

[8] IMPLANTATION AND TRANSIENT B-DIFFUSION IN SI - THE SOURCE OF THE INTERSTITIALS [J].

EAGLESHAM, DJ ;

STOLK, PA ;

GOSSMANN, HJ ;

POATE, JM .

APPLIED PHYSICS LETTERS, 1994, 65 (18) :2305-2307

[9] A predictive model for transient enhanced diffusion based on evolution of {311} defects [J].

Gencer, AH ;

Dunham, ST .

JOURNAL OF APPLIED PHYSICS, 1997, 81 (02) :631-636

[10] Modeling of {311} defects [J].

Hobler, G ;

Rafferty, CS .

SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 :123-134