Self-catalyzed growth of GaSb nanowires at low reaction temperatures

被引：19

作者：

Schulz, Stephan ^{[1
,2
]}

Schwartz, Marcel ^{[1
,2
]}

Kuczkowski, Andreas ^{[1
,2
]}

Assenmacher, Wilfried ^{[3
]}

机构：

[1] Univ Duisburg Essen, Dept Chem, D-45117 Essen, Germany

[2] Univ Duisburg Essen, CeNIDE, D-45117 Essen, Germany

[3] Univ Bonn, Dept Chem, D-53117 Bonn, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 2010年 / 312卷 / 09期

关键词：

Nanostructures; Metalorganic chemical vapor deposition; Antimonides; Semiconducting gallium compounds; LIQUID-SOLID MECHANISM; GAAS; SEMICONDUCTORS; DECOMPOSITION; ANTIMONIDE; DISTIBANES; GALLIUM; PHYSICS; ARRAYS;

D O I：

10.1016/j.jcrysgro.2010.01.026

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Thermal decomposition of Lewis acid-base adducts [t-Bu3Ga-Sbi-Pr-3] (1) and [t-Bu3Ga](2)[Sb2Et4] (2) in closed glass ampoules at temperatures between 250 and 350 degrees C yielded crystalline GaSb nanowires. Isolated GaSb nanowires were formed preferably at low decomposition temperatures, whereas dendritic-like growth was observed at higher decomposition temperatures. In addition, self-catalyzed growth of GaSb nanowires using 90 nm-sized Ga droplets, which were pre-deposited on Si(1 0 0) substrates, was achieved with the distibine Sb2Et4 at 250 degrees C (C) 2010 Elsevier B.V. All rights reserved.

引用

收藏

页码：1475 / 1480

页数：6

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