Investigation of deep levels in semi-insulating vanadium-doped 4H-SiC by photocurrent spectroscopy

被引：3

作者：

Rejhon, Martin ^{[1
]}

Brynza, Mykola ^{[1
]}

Grill, Roman ^{[1
]}

Belas, Eduard ^{[1
]}

Kunc, Jan ^{[1
]}

机构：

[1] Charles Univ Prague, Fac Math & Phys, Inst Phys, Ke Karlovu 5, CZ-12116 Prague 2, Czech Republic

来源：

PHYSICS LETTERS A | 2021年 / 405卷

关键词：

Semi-insulating SiC; 4H-SiC; Photocurrent spectroscopy; Deep levels; Localization radius; SILICON-CARBIDE; ACCEPTOR LEVEL; CROSS-SECTION; HIGH-PURITY; HIGH-POWER; 4H; CENTERS; PHOTOIONIZATION; PHOTOCONDUCTIVITY; RESISTIVITY;

D O I：

10.1016/j.physleta.2021.127433

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We measured spectral-resolved photocurrent in a wide range of photon energies from 0.68eV to 4.10eV, current-voltage characteristics, and mid to near-infrared transmittance spectra on a semi-insulating 4H-SiC wafer at room temperature. We identified four deep levels, their energies, and localization radii. The model considers the defects' wavefunction as a linear combination of s- and p-states. Such a linear combination leads to the mixture of dipole allowed and forbidden transitions. The forbidden transitions contribute to a broad photocurrent spectrum, and the allowed transitions appear as sharp photocurrent peaks. The width of photocurrent peaks is related to the localization radius of deep levels. (C) 2021 Elsevier B.V. All rights reserved.

引用

页数：7

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[1] Band gap states of Ti, V, and Cr in 4H silicon carbide [J].