Amorphous silicon waveguides and interferometers for low-cost silicon optoelectronics

被引：3

作者：

Cocorullo, G ^{[1
]}

Della Corte, FG ^{[1
]}

De Rosa, R ^{[1
]}

Rendina, I ^{[1
]}

Rubino, A ^{[1
]}

Terzini, E ^{[1
]}

机构：

[1] CNR, Inst Res Electronmagnetism & Elect Devices, Natl Res Council Italy, I-80124 Naples, Italy

来源：

INTEGRATED OPTIC DEVICES II | 1998年 / 3278卷

关键词：

silicon; silicon carbide; amorphous semiconductors; waveguides; integrated optics; silicon optoelectronics; Fabry-Perot interferometers;

D O I：

10.1117/12.298212

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present work reports on our recent achievements in the exploitation of a simple technology for the fabrication of hydrogenated amorphous silicon (a-Si:H) based low-loss rib waveguides. In particular, waveguides with various widths have been fabricated out of an a-SiC:H/a-Si:H stack deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) at the relatively low temperature of 220 degrees C. The ribs were defined by an anisotropic, CH4-based, Reactive Ion Etching process. The devices have been subsequently characterized by cut-back technique. Even though st dependence of attenuation parameter on the waveguide width was observed, propagation losses as low as 0.7 dB/cm could be measured at lambda=1.3 mu m, in good agreement with the theoretical estimations based on the intrinsic absorption of the material. Starting from the same structure, a Fabry-Perot thermo optical modulator has been also fabricated and tested at the communication wavelength of 1.3 mu m.

引用

页码：286 / 292

页数：7