Atomic-Scale Engineering of Abrupt Interface for Direct Spin Contact of Ferromagnetic Semiconductor with Silicon

被引：35

作者：

Averyanov, Dmitry V. ^{[1
]}

Karateeva, Christina G. ^{[1
]}

Karateev, Igor A. ^{[1
]}

Tokmachev, Andrey M. ^{[1
]}

Vasiliev, Alexander L. ^{[1
]}

Zolotarev, Sergey I. ^{[1
]}

Likhachev, Igor A. ^{[1
]}

Storchak, Vyacheslav G. ^{[1
]}

机构：

[1] Natl Res Ctr, Kurchatov Inst, Kurchatov Sq 1, Moscow 123182, Russia

来源：

SCIENTIFIC REPORTS | 2016年 / 6卷

基金：

俄罗斯科学基金会; 俄罗斯基础研究基金会;

关键词：

EPITAXIAL INTEGRATION; CRYSTALLINE OXIDES; INJECTION; EUO; METAL;

D O I：

10.1038/srep22841

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Control and manipulation of the spin of conduction electrons in industrial semiconductors such as silicon are suggested as an operating principle for a new generation of spintronic devices. Coherent injection of spin-polarized carriers into Si is a key to this novel technology. It is contingent on our ability to engineer flawless interfaces of Si with a spin injector to prevent spin-flip scattering. The unique properties of the ferromagnetic semiconductor EuO make it a prospective spin injector into silicon. Recent advances in the epitaxial integration of EuO with Si bring the manufacturing of a direct spin contact within reach. Here we employ transmission electron microscopy to study the interface EuO/Si with atomic-scale resolution. We report techniques for interface control on a submonolayer scale through surface reconstruction. Thus we prevent formation of alien phases and imperfections detrimental to spin injection. This development opens a new avenue for semiconductor spintronics.

引用

页数：9

共 48 条

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