Field-induced nucleation in threshold switching characteristics of electrochemical metallization devices

被引：74

作者：

Yoo, Jongmyung ^{[1
]}

Park, Jaehyuk ^{[1
]}

Song, Jeonghwan ^{[1
]}

Lim, Seokjae ^{[1
]}

Hwang, Hyunsang ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol POSTECH, Dept Mat Sci & Engn, 77 Cheongam Ro, Pohang 790784, South Korea

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 06期

关键词：

Nucleation;

D O I：

10.1063/1.4985165

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this research, we investigate electrically driven threshold switching (TS) characteristics in electrochemical metallization cells by adopting the field-induced nucleation theory. For this aim, Ag/HfO2 and Ag/TiO2 based TS devices are prepared and examined. First, we carry out the field driven turn-on process to form Ag filaments created as a consequence of sequential nucleation of Ag ions from the bottom electrode. During the filament formation process, it is observed that the prepared devices show switching time exponential in voltage and temperature with different nucleation barrier energies (W-0), which confirms the field-induced nucleation theory. Furthermore, we find that the device with higher W-0 shows faster dissolution speed. This implies that the slow turn-off speed of the TS device can be improved by finding a material system with a higher W-0 value. Published by AIP Publishing.

引用

页数：4

共 14 条

[1]

Bricalli A., 2016, IEEE IEDM

[2] Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices [J].