A study of disorder effects in random (AlxGa1-xAs)n(AlyGa1-yAs)m superlattices embedded in a wide parabolic potential

被引：8

作者：

Pusep, Yu. A. ^{[1
]}

Mohseni, P. K. ^{[1
,2
]}

LaPierre, R. R. ^{[2
]}

Bakarov, A. K. ^{[3
]}

Toropov, A. I. ^{[3
]}

机构：

[1] Univ Sao Paulo, Inst Fis Sao Carlos, BR-13560970 Sao Paulo, Brazil

[2] McMaster Univ, Dept Engn Phys, Ctr Emerging Device Technol, Hamilton, ON L8S 4L7, Canada

[3] Russian Acad Sci, Inst Semicond Phys, Novosibirsk 630090, Russia

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 11期

基金：

巴西圣保罗研究基金会;

关键词：

aluminium compounds; gallium arsenide; III-V semiconductors; localised states; photoluminescence; semiconductor quantum wells; semiconductor superlattices; spectral line shift; valence bands; QUANTUM-WELLS;

D O I：

10.1063/1.3364138

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A photoluminescence (PL) study of the individual electron states localized in a random potential is performed in artificially disordered superlattices embedded in a wide parabolic well. The valence band bowing of the parabolic potential provides a variation of the emission energies which splits the optical transitions corresponding to different wells within the random potential. The blueshift of the PL lines emitted by individual random wells, observed with increasing disorder strength, is demonstrated. The variation of temperature and magnetic field allowed for the behavior of the electrons localized in individual wells of the random potential to be distinguished.

引用

页数：3

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