Low capacitance point diodes fabricated with focused ion beam implantation

Low capacitance p(+)n point diodes were fabricated by combination of sputtering and implantation of a 35 keV Ga focused ion beam through a thin oxide layer on a silicon substrate. The capacitance of the diodes were determined to be in the range of 10(-16) F. The current-voltage characteristics show a tendency to a generation/recombination controlled behaviour with increasing dose and with increasing depth of the sputter crater. This is correlated to the big amount of inactive Ga atoms of about 70% in the Si lattice after an annealing of 900 degreesC; 20 min, N-2. (C) 2003 Elsevier Science Ltd. All rights reserved.