Ultra-low-energy all-CMOS modulator integrated with driver

被引：67

作者：

Zheng, Xuezhe ^{[1
]}

Lexau, Jon ^{[2
]}

Luo, Ying ^{[1
]}

Thacker, Hiren ^{[1
]}

Pinguet, Thierry ^{[3
]}

Mekis, Attila ^{[3
]}

Li, Guoliang ^{[1
]}

Shi, Jing ^{[1
]}

Amberg, Philip ^{[2
]}

Pinckney, Nathaniel ^{[2
]}

Raj, Kannan ^{[1
]}

Ho, Ron ^{[2
]}

Cunningham, John E. ^{[1
]}

Krishnamoorthy, Ashok V. ^{[1
]}

机构：

[1] Sun Microsyst Phys Sci Ctr, San Diego, CA 92121 USA

[2] Sun Labs, Menlo Pk, CA 94025 USA

[3] Luxtera Inc, Carlsbad, CA 92011 USA

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 03期

关键词：

OPTICAL MODULATOR; SILICON; CHIP;

D O I：

10.1364/OE.18.003059

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We report the first sub-picojoule per bit (400fJ/bit) operation of a silicon modulator intimately integrated with a driver circuit and embedded in a clocked digital transmitter. We show a wall-plug power efficiency below 400 mu W/Gbps for a 130nm SOI CMOS carrier-depletion ring modulator flip-chip integrated to a 90nm bulk Si CMOS driver circuit. We also demonstrate stable error-free transmission of over 1.5 petabits of data at 5Gbps over 3.5 days using the integrated modulator without closed-loop ring resonance tuning. Small signal measurements of the CMOS ring modulator, sans circuit, showed a 3dB bandwidth in excess of 15GHz at 1V of reverse bias, indicating that further increases in transmission rate and reductions of energy-per-bit is possible while retaining compatibility with CMOS drive voltages. (C) 2010 Optical Society of America

引用

页码：3059 / 3070

页数：12

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