Current transport properties of SiO2 films containing Ge nanocrystals

被引：59
|
作者：
Fujii, M [1 ]
Mamezaki, O
Hayashi, S
Yamamoto, K
机构：
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 657, Japan
[2] Kobe Univ, Grad Sch Sci & Technol, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 657, Japan
来源：
JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 03期
关键词：
D O I：
10.1063/1.366858
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The electrical transport properties of SiO2 films (greater than or equal to 3 mu m in thickness) containing Ge nanocrystals have been studied. We found that the films exhibit T-1/2 dependence of ln(sigma) under relatively low electric fields independent of the volume fraction of Ge in the films, where T and sigma are the temperature and the conductivity, respectively. The observed electrical properties could be well explained by the theory developed by Simanek [Solid State Commun. 40, 1021 (1981)] which considers the tunneling of thermally activated carriers between neighboring nanocrystals. (C) 1998 American Institute of Physics. [S0021-8979(98)05303-1].
引用
收藏
页码：1507 / 1512
页数：6
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