Post-annealing recrystallization and damage recovery process in Fe ion implanted Si

被引：0
|
作者：
Naito, Muneyuki [1 ]
Hirata, Aklhiko [1 ]
Ishimaru, Manabu [1 ]
Hirotsu, Yoshihiko [1 ]
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Osaka 5670047, Japan
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 2007年 / 257卷
关键词：
iron silicides; ion implantation; solid phase crystallization; EELS mapping;
D O I：
10.1016/j.nimb.2007.01.023
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We have investigated ion-beam-induced and thermal annealing-induced microstructures in high fluence Fe implanted Si using transmission electron microscopy. Si(l 11) substrates were irradiated with 120 keV Fe ions at 120 K to fluences of 0.4 x 10(17) and 4.0 x 10(17) CM-2. A continuous amorphous layer was formed on Si substrates in both as-implanted samples. After thermal annealing at 1073 K for 2 h, beta-FeSi2 fine particles buried in a polycrystalline Si layer were observed in the low fluence sample, while a continuous beta-FeSi2 layer was formed in the high fluence sample. We discuss the relationship between ion fluence and defects recovery process in Fe ion implanted Si. (c) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码：340 / 343
页数：4
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