Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application

被引：101

作者：

Qi, WJ ^{[1
]}

Nieh, R ^{[1
]}

Dharmarajan, E ^{[1
]}

Lee, BH ^{[1
]}

Jeon, Y ^{[1
]}

Kang, LG ^{[1
]}

Onishi, K ^{[1
]}

Lee, JC ^{[1
]}

机构：

[1] Univ Texas, Microelect Res Ctr, Austin, TX 78758 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 11期

关键词：

D O I：

10.1063/1.1308535

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zirconium silicate (ZrSixOy) films have been sputtered by comagnetron-reactive sputtering. The composition of ZrSixOy has been controlled by adjusting the sputtering powers of Si and Zr targets to achieve various effective dielectric constants. The sputtered silicate layers showed low equivalent oxide thickness of 14.5 Angstrom with a low leakage of 3.3x10(-3) A/cm(2) at -1.5 V relative to flat band voltage. The silicate films also exhibited good high-temperature stability and smooth interfacial properties on silicon substrate. (C) 2000 American Institute of Physics. [S0003-6951(00)01337-1].

引用

页码：1704 / 1706

页数：3

共 9 条

[1]

BLUMENTHAL WB, 1958, CHEM BEHAV ZIRCONIUM, P201

[2]

Byoung Hun Lee, 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318), P133, DOI 10.1109/IEDM.1999.823863

[3] Estimating oxide thickness of tunnel oxides down to 1.4 nm using conventional capacitance-voltage measurements on MOS capacitors [J].