Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

被引：21
作者：
Iatsunskyi, Igor [1 ]
Jurga, Stefan [1 ]
Smyntyna, Valentyn [2 ]
Pavlenko, Mykolai [2 ]
Myndrul, Valeriy [2 ]
Zaleska, Anastasia [2 ]
机构：
[1] Adam Mickiewicz Univ, Nanobiomed Ctr, Ul Umultowska 85, PL-61614 Poznan, Poland
[2] Mechnikov Natl Univ, Dept Expt Phys, Odessa, Ukraine
来源：
OPTICAL MICRO- AND NANOMETROLOGY V | 2014年 / 9132卷
关键词：
nanosilicon; metal-assisted chemical etching; Raman spectroscopy; POROUS SILICON; ONE-PHONON; ABSORPTION; SCATTERING; SPECTRA;
D O I：
10.1117/12.2051489
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metal-assisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm(-1) corresponds to superposition of three transverse optical phonons similar to 2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.
引用
收藏
页数：7
相关论文
共 50 条
[41]   Fabrication and characterization of silicon nanostructures based on metal-assisted chemical etching [J].
Zhang, Wendong ;
Fan, Xuge ;
Sang, Shengbo ;
Li, Pengwei ;
Li, Gang ;
Sun, Yongjiao ;
Hu, Jie .
KOREAN JOURNAL OF CHEMICAL ENGINEERING, 2014, 31 (01) :62-67
[42]   Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal-Assisted Chemical Etching [J].
Vinzons, Lester U. ;
Shu, Lei ;
Yip, SenPo ;
Wong, Chun-Yuen ;
Chan, Leanne L. H. ;
Ho, Johnny C. .
NANOSCALE RESEARCH LETTERS, 2017, 12
[43]   Unraveling the Morphological Evolution and Etching Kinetics of Porous Silicon Nanowires During Metal-Assisted Chemical Etching [J].
Lester U. Vinzons ;
Lei Shu ;
SenPo Yip ;
Chun-Yuen Wong ;
Leanne L. H. Chan ;
Johnny C. Ho .
Nanoscale Research Letters, 2017, 12
[44]   Influence of the doping level on the porosity of silicon nanowires prepared by metal-assisted chemical etching [J].
Geyer, Nadine ;
Wollschlaeger, Nicole ;
Fuhrmann, Bodo ;
Tonkikh, Alexander ;
Berger, Andreas ;
Werner, Peter ;
Jungmann, Marco ;
Krause-Rehberg, Reinhard ;
Leipner, Hartmut S. .
NANOTECHNOLOGY, 2015, 26 (24)
[45]   The mechanism of galvanic/metal-assisted etching of silicon [J].
Kurt W Kolasinski .
Nanoscale Research Letters, 9
[46]   The mechanism of galvanic/metal-assisted etching of silicon [J].
Kolasinski, Kurt W. .
NANOSCALE RESEARCH LETTERS, 2014, 9 :1-8
[47]   Effect of noble metal catalyst species on the morphology of macroporous silicon formed by metal-assisted chemical etching [J].
Asoh, Hidetaka ;
Arai, Fusao ;
Ono, Sachiko .
ELECTROCHIMICA ACTA, 2009, 54 (22) :5142-5148
[48]   Triangle pore arrays fabricated on Si (111) substrate by sphere lithography combined with metal-assisted chemical etching and anisotropic chemical etching [J].
Asoh, Hidetaka ;
Fujihara, Kosuke ;
Ono, Sachiko .
NANOSCALE RESEARCH LETTERS, 2012, 7
[49]   Fabrication of Silicon Nanowire Forests for Thermoelectric Applications by Metal-Assisted Chemical Etching [J].
Dimaggio, Elisabetta ;
Narducci, Dario ;
Pennelli, Giovanni .
JOURNAL OF MATERIALS ENGINEERING AND PERFORMANCE, 2018, 27 (12) :6279-6285
[50]   Using HCl to Control Silver Dissolution in Metal-Assisted Chemical Etching of Silicon [J].
Williams, Max O. ;
Jervell, Ada L. H. ;
Hiller, Daniel ;
Zacharias, Margit .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2018, 215 (18)
12345