Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

被引：21

作者：

Iatsunskyi, Igor ^{[1
]}

Jurga, Stefan ^{[1
]}

Smyntyna, Valentyn ^{[2
]}

Pavlenko, Mykolai ^{[2
]}

Myndrul, Valeriy ^{[2
]}

Zaleska, Anastasia ^{[2
]}

机构：

[1] Adam Mickiewicz Univ, Nanobiomed Ctr, Ul Umultowska 85, PL-61614 Poznan, Poland

[2] Mechnikov Natl Univ, Dept Expt Phys, Odessa, Ukraine

来源：

OPTICAL MICRO- AND NANOMETROLOGY V | 2014年 / 9132卷

关键词：

nanosilicon; metal-assisted chemical etching; Raman spectroscopy; POROUS SILICON; ONE-PHONON; ABSORPTION; SCATTERING; SPECTRA;

D O I：

10.1117/12.2051489

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metal-assisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm(-1) corresponds to superposition of three transverse optical phonons similar to 2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.

引用

页数：7

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