Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

被引：21
作者：
Iatsunskyi, Igor [1 ]
Jurga, Stefan [1 ]
Smyntyna, Valentyn [2 ]
Pavlenko, Mykolai [2 ]
Myndrul, Valeriy [2 ]
Zaleska, Anastasia [2 ]
机构：
[1] Adam Mickiewicz Univ, Nanobiomed Ctr, Ul Umultowska 85, PL-61614 Poznan, Poland
[2] Mechnikov Natl Univ, Dept Expt Phys, Odessa, Ukraine
来源：
OPTICAL MICRO- AND NANOMETROLOGY V | 2014年 / 9132卷
关键词：
nanosilicon; metal-assisted chemical etching; Raman spectroscopy; POROUS SILICON; ONE-PHONON; ABSORPTION; SCATTERING; SPECTRA;
D O I：
10.1117/12.2051489
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metal-assisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm(-1) corresponds to superposition of three transverse optical phonons similar to 2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.
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页数：7
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