Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

被引：21

作者：

Iatsunskyi, Igor ^{[1
]}

Jurga, Stefan ^{[1
]}

Smyntyna, Valentyn ^{[2
]}

Pavlenko, Mykolai ^{[2
]}

Myndrul, Valeriy ^{[2
]}

Zaleska, Anastasia ^{[2
]}

机构：

[1] Adam Mickiewicz Univ, Nanobiomed Ctr, Ul Umultowska 85, PL-61614 Poznan, Poland

[2] Mechnikov Natl Univ, Dept Expt Phys, Odessa, Ukraine

来源：

OPTICAL MICRO- AND NANOMETROLOGY V | 2014年 / 9132卷

关键词：

nanosilicon; metal-assisted chemical etching; Raman spectroscopy; POROUS SILICON; ONE-PHONON; ABSORPTION; SCATTERING; SPECTRA;

D O I：

10.1117/12.2051489

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metal-assisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm(-1) corresponds to superposition of three transverse optical phonons similar to 2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.

引用

页数：7

共 19 条

[1] Raman scattering studies of heavily doped microcrystalline porous silicon and porous silicon free-standing membranes [J].

Abidi, Dorra ;

Jusserand, Bernard ;

Fave, Jean-Louis .

PHYSICAL REVIEW B, 2010, 82 (07)

[2] Porous silicon: a quantum sponge structure for silicon based optoelectronics [J].

Bisi, O ;

Ossicini, S ;

Pavesi, L .

SURFACE SCIENCE REPORTS, 2000, 38 (1-3) :1-126

[3] THE EFFECTS OF MICROCRYSTAL SIZE AND SHAPE ON THE ONE PHONON RAMAN-SPECTRA OF CRYSTALLINE SEMICONDUCTORS [J].

CAMPBELL, IH ;

FAUCHET, PM .

SOLID STATE COMMUNICATIONS, 1986, 58 (10) :739-741

[4]

Cao LY, 2009, NAT MATER, V8, P643, DOI [10.1038/nmat2477, 10.1038/NMAT2477]

[5] Optical Absorption Enhancement in Silicon Nanohole Arrays for Solar Photovoltaics [J].

Han, Sang Eon ;

Chen, Gang .

NANO LETTERS, 2010, 10 (03) :1012-1015

[6] Metal-Assisted Chemical Etching of Silicon: A Review [J].

Huang, Zhipeng ;

Geyer, Nadine ;

Werner, Peter ;

de Boor, Johannes ;

Goesele, Ulrich .

ADVANCED MATERIALS, 2011, 23 (02) :285-308

[7]

Iatsunskyi I., 2012, ISRN OPTICS

[8] Ammonia detection using optical reflectance from porous silicon formed by metal-assisted chemical etching [J].

Iatsunskyi, Igor ;

Smyntyna, Valentyn ;

Pavlenko, Mykolai ;

Kanevska, Olga ;

Kirik, Yuliia ;

Myndrul, Valeryi .

OPTICS AND PHOTONICS FOR COUNTERTERRORISM, CRIME FIGHTING AND DEFENCE IX; AND OPTICAL MATERIALS AND BIOMATERIALS IN SECURITY AND DEFENCE SYSTEMS TECHNOLOGY X, 2013, 8901

[9] Mechanism of Raman scattering in amorphous silicon [J].

Ivanda, M ;

Gamulin, O ;

Kiefer, W .

JOURNAL OF MOLECULAR STRUCTURE, 1999, 481 :651-655

[10] OBSERVATION OF THE AMORPHOUS-TO-CRYSTALLINE TRANSITION IN SILICON BY RAMAN-SCATTERING [J].

KAMIYA, T ;

KISHI, M ;

USHIROKAWA, A ;

KATODA, T .

APPLIED PHYSICS LETTERS, 1981, 38 (05) :377-379

← 1 2 →