Evolution of crystal structures in GeTe during phase transition

被引:37
作者
Jeong, Kwangsik [1 ]
Park, Seungjong [1 ]
Park, Dambi [1 ]
Ahn, Min [1 ]
Han, Jeonghwa [1 ]
Yang, Wonjun [1 ]
Jeong, Hong-Sik [2 ]
Cho, Mann-Ho [1 ]
机构
[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea
[2] Yonsei Univ, Sch Integrated Technol, Incheon 406840, South Korea
来源
SCIENTIFIC REPORTS | 2017年 / 7卷
基金
新加坡国家研究基金会;
关键词
BILBAO CRYSTALLOGRAPHIC SERVER; ELECTRICAL-PROPERTIES; ELECTRONIC-PROPERTIES; RAMAN-SCATTERING; BAND-STRUCTURE;
D O I
10.1038/s41598-017-01154-z
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
We investigated changes in the crystal structure of GeTe during its phase transition. Using density functional theory (DFT) calculations, four possible crystal structures were identified: R3m, P1, Cm, and Fm3m. Among these, P1 and Cm were examined here for the first time. By calculating the internal energy of the crystal volume change, we verified that P1, R3m, and Cm can coexist in crystalline GeTe. The X-ray diffraction spectra of annealed and laser-irradiated GeTe films revealed coexisting P1 or R3m and Cm. In addition, we confirmed that Cm transforms into P1 or R3m after laser irradiation. The presence of these new structures was revealed in the crystal Raman spectra. Many of the Raman peaks in the crystalized GeTe could be explained by the coexistence of various structures. By calculating the band gaps of these structures, we also found that a structural transformation induces a change in the crystal resistance, owing to differences in the band gaps of individual structures. The generation of new crystal structures suggests a facile phase change and instability during the structural transformation.
引用
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页数:12
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