Interstitial oxygen and dopant atoms arrangement in tin-doped indium oxide

被引:11
作者
Inerbaev, Talgat M. [1 ]
Sahara, Ryoji
Mizuseki, Hiroshi
Kawazoe, Yoshiyuki
Nakamura, Takashi
机构
[1] Tohoku Univ, Mat Res Inst, Sendai, Miyagi 9808577, Japan
[2] Tohoku Univ, IMRAM, Sendai, Miyagi 9808577, Japan
关键词
transparent conducting oxide; indium tin oxide; interstitial oxygen; defect structure; density functional calculations;
D O I
10.2320/matertrans.48.666
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In the present study an attempt to clarify discrepancy between experimental and theoretical results for preference substitution of d or b indium cation sites by tin is performed. For this purpose, the density functional calculations for a number of oxidized and reduced states of ITO with different configurations for tin substituted cation sites are carried out. For reduced states the probability for tin substituents to occupy the b positions is significantly larger than the same value for the d sites. These results indicate that the more favorable occupancy of either b or d cation positions by tin substituent depends on the way of the defect formation.
引用
收藏
页码:666 / 669
页数:4
相关论文
共 16 条
[1]   ELECTRICAL-PROPERTIES AND DEFECT MODEL OF TIN-DOPED INDIUM OXIDE LAYERS [J].
FRANK, G ;
KOSTLIN, H .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (04) :197-206
[2]   Defect structure studies of bulk and nano-indium-tin oxide [J].
González, GB ;
Mason, TO ;
Quintana, JP ;
Warschkow, O ;
Ellis, DE ;
Hwang, JH ;
Hodges, JP ;
Jorgensen, JD .
JOURNAL OF APPLIED PHYSICS, 2004, 96 (07) :3912-3920
[3]   Neutron diffraction study on the defect structure of indium-tin-oxide [J].
González, GB ;
Cohen, JB ;
Hwang, JH ;
Mason, TO ;
Hodges, JP ;
Jorgensen, JD .
JOURNAL OF APPLIED PHYSICS, 2001, 89 (05) :2550-2555
[4]   Transparent and conducting ITO films:: new developments and applications [J].
Granqvist, CG ;
Hultåker, A .
THIN SOLID FILMS, 2002, 411 (01) :1-5
[5]   From ultrasoft pseudopotentials to the projector augmented-wave method [J].
Kresse, G ;
Joubert, D .
PHYSICAL REVIEW B, 1999, 59 (03) :1758-1775
[6]   Applications and processing of transparent conducting oxides [J].
Lewis, BG ;
Paine, DC .
MRS BULLETIN, 2000, 25 (08) :22-27
[7]   REFINEMENT OF CRYSTAL STRUCTURE OF IN2O3 AT 2 WAVELENGTHS [J].
MAREZIO, M .
ACTA CRYSTALLOGRAPHICA, 1966, 20 :723-&
[8]   Electronic band structure of indium tin oxide and criteria for transparent conducting behavior [J].
Mryasov, ON ;
Freeman, AJ .
PHYSICAL REVIEW B, 2001, 64 (23)
[9]   Structural studies of tin-doped indium oxide (ITO) and In4Sn3O12 [J].
Nadaud, N ;
Lequeux, N ;
Nanot, M ;
Jove, J ;
Roisnel, T .
JOURNAL OF SOLID STATE CHEMISTRY, 1998, 135 (01) :140-148
[10]   CHARACTERIZATION AND ESTIMATION OF ITO (INDIUM-TIN-OXIDE) BY MOSSBAUER SPECTROMETRY [J].
NOMURA, K ;
UJIHIRA, Y ;
TANAKA, S ;
MATSUMOTO, K .
HYPERFINE INTERACTIONS, 1988, 42 (1-4) :1207-1210