A Control Circuit for GaN HEMT Power Amplifiers

被引：0
|
作者：
Wu, Jia Jie [1 ]
Jiang, Yu Ting [1 ]
Yang, Yuan Wang [1 ]
You, Chang Jiang [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Informat & Commun Engn, Chengdu 611731, Peoples R China
来源：
2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019) | 2019年
基金：
国家重点研发计划;
关键词：
control circuit; GaN-HEMT; PA; switch; EMI; power consumption; MODE;
D O I：
10.1109/icmmt45702.2019.8992176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new control circuit for GaN HEMT power amplifiers (PAs) has been proposed for radio frequency (RF) system in this paper. The circuit is used to protect the GaN HEMT PAs. At the same time, it's also able to switch the PA. It is a problem to protect the GaN HEMT PA in the RF system using a convenient circuit to operate without manual sequential operation. This circuit can switch the PA with external voltage in order to prevent for the EMI and power consumption. Generally GaN HEMT PAs need two power sources with different polarities; this circuit has just used one power supply which has convenient circuit structure and practical performance.
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页数：3
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