A Control Circuit for GaN HEMT Power Amplifiers

被引：0
|
作者：
Wu, Jia Jie [1 ]
Jiang, Yu Ting [1 ]
Yang, Yuan Wang [1 ]
You, Chang Jiang [1 ]
机构：
[1] Univ Elect Sci & Technol China, Sch Informat & Commun Engn, Chengdu 611731, Peoples R China
来源：
2019 INTERNATIONAL CONFERENCE ON MICROWAVE AND MILLIMETER WAVE TECHNOLOGY (ICMMT 2019) | 2019年
基金：
国家重点研发计划;
关键词：
control circuit; GaN-HEMT; PA; switch; EMI; power consumption; MODE;
D O I：
10.1109/icmmt45702.2019.8992176
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A new control circuit for GaN HEMT power amplifiers (PAs) has been proposed for radio frequency (RF) system in this paper. The circuit is used to protect the GaN HEMT PAs. At the same time, it's also able to switch the PA. It is a problem to protect the GaN HEMT PA in the RF system using a convenient circuit to operate without manual sequential operation. This circuit can switch the PA with external voltage in order to prevent for the EMI and power consumption. Generally GaN HEMT PAs need two power sources with different polarities; this circuit has just used one power supply which has convenient circuit structure and practical performance.
引用
收藏
页数：3
相关论文
共 50 条
  • [1] Efficient AlGaN/GaN HEMT Power Amplifiers
    Quay, R.
    van Raay, F.
    Kuehn, J.
    Kiefer, R.
    Waltereit, P.
    Zorcic, M.
    Musser, M.
    Bronner, W.
    Dammann, A.
    Seelmann-Eggebert, M.
    Schlechtweg, A.
    Mikulla, M.
    Ambacher, O.
    Thorpe, J.
    Riepe, K.
    van Rijs, F.
    Saad, M.
    Harm, L.
    Roedle, T.
    2008 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC), 2008, : 87 - +
  • [2] A review of GaN HEMT broadband power amplifiers
    Hamza, K. Husna
    Nirmal, D.
    AEU-INTERNATIONAL JOURNAL OF ELECTRONICS AND COMMUNICATIONS, 2020, 116
  • [3] Linearity Improvement of GaN HEMT for RF Power Amplifiers
    Inoue, Kazutaka
    Yamamoto, Hiroshi
    Nakata, Ken
    Yamada, Fumio
    Yamamoto, Takashi
    Sano, Seigo
    2013 IEEE COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT SYMPOSIUM (CSICS): INTEGRATED CIRCUITS IN GAAS, INP, SIGE, GAN AND OTHER COMPOUND SEMICONDUCTORS, 2013,
  • [4] Wideband 400 W Pulsed Power GaN HEMT Amplifiers
    Krishnamurthy, K.
    Martin, J.
    Landberg, B.
    Vetury, R.
    Poulton, M. J.
    2008 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-4, 2008, : 302 - 305
  • [5] Response Time of VSWR Protection for GaN HEMT based Power Amplifiers
    Preis, Sebastian
    Ferretti, Jerome
    Wolff, Nikolai
    Wiens, Alex
    Jakoby, Rolf
    Heinrich, Wolfgang
    Bengtsson, Olof
    2016 46TH EUROPEAN MICROWAVE CONFERENCE (EUMC), 2016, : 401 - 404
  • [6] A Review of Ku-Band GaN HEMT Power Amplifiers Development
    Kim, Jihoon
    MICROMACHINES, 2024, 15 (11)
  • [7] Thermal Analysis and its application to High Power GaN HEMT Amplifiers
    Prejs, A.
    Wood, S.
    Pengelly, R.
    Pribble, W.
    2009 IEEE/MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM, VOLS 1-3, 2009, : 917 - 920
  • [8] GaN Integrated Circuit Power Amplifiers: Developments and Prospects
    Nikandish, Reza
    IEEE JOURNAL OF MICROWAVES, 2023, 3 (01): : 441 - 452
  • [9] Bandwidth versus Efficiency Performance using Power Combining in GaN HEMT Power Amplifiers
    Preis, Sebastian
    Arnous, Tareq
    Zhang, Zihui
    Saad, Paul
    Boeck, Georg
    2013 EUROPEAN MICROWAVE CONFERENCE (EUMC), 2013, : 696 - 699
  • [10] High-linearity Class B power amplifiers in GaN HEMT technology
    Xie, SX
    Paidi, V
    Coffie, R
    Keller, S
    Heikman, S
    Moran, B
    Chini, A
    DenBaars, SR
    Mishra, U
    Long, S
    Rodwell, MJW
    IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS, 2003, 13 (07) : 284 - 286
12345