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Multilayer MgZnO/ZnO thin films for UV photodetectors
被引:84
作者:

Rana, Vijay S.
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机构:
Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India

Rajput, Jeevitesh K.
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Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India

Pathak, Trilok K.
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机构:
Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India
Teerthanker Mahaveer Univ, Dept Phys, TKCOE, Moradabad, India Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India

Purohit, L. P.
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h-index: 0
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Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India
机构:
[1] Gurukula Kangri Univ, Dept Phys, Semicond Res Lab, Haridwar, India
[2] Teerthanker Mahaveer Univ, Dept Phys, TKCOE, Moradabad, India
关键词:
MgZnO/ZnO;
Sol-gel method;
I-V characteristics;
Photodetection;
SOL-GEL;
OPTICAL-PROPERTIES;
ZNO;
FABRICATION;
DETECTORS;
HETEROJUNCTION;
TEMPERATURE;
GROWTH;
D O I:
10.1016/j.jallcom.2018.06.139
中图分类号:
O64 [物理化学(理论化学)、化学物理学];
学科分类号:
070304 ;
081704 ;
摘要:
MgyZn1-yO/ZnO thin films have been deposited on soda lime glass substrates by using sol-gel spin coating technique with varying Mg contents (y = 2, 4, 6, 8 at. %). X-ray diffraction (XRD) studies indicate that films exhibit the wurtzite phase with a preferential c-axis (002) orientation. The scanning electron micrographs revealed that at low doping level round and oval shaped microstructure were formed and on increasing Mg content nanoflower and nanoplate morphology were found. The transmittance of the thin films was measured in the wavelength range 300 nm-800 nm and the bandgap increased from 3.25 eV to 3.29 eV with increasing Mg content. The I-V measurements were performed in dark and illumination conditions show Ohmic behaviour. MgyZn1-yO/ZnO (y = 2 at. %) thin films show high stability and fast switching UV photoresponse behaviour. The highest responsivity of 0.16 A/W was obtained at 3.2 mW/cm(2) exposure of UV light (365 nm) at 5 V bias voltage. (C) 2018 Elsevier B.V. All rights reserved.
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页码:724 / 729
页数:6
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