Ambipolar field-effect transistor characteristics of (BEDT-TTF)(TCNQ) crystals and metal-like conduction induced by a gate electric field

被引：69

作者：

Sakai, Masatoshi ^{[1
]}

Sakuma, Hirotaka ^{[1
]}

Ito, Yuya ^{[1
]}

Saito, Akinobu ^{[1
]}

Nakamura, Masakazu ^{[1
]}

Kudo, Kazuhiro ^{[1
]}

机构：

[1] Chiba Univ, Dept Elect & Mech Engn, Inage Ku, Chiba 2638522, Japan

来源：

PHYSICAL REVIEW B | 2007年 / 76卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.76.045111

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ambipolar carrier conduction has been observed in a metal-insulator-semiconductor field-effect transistor made using (BEDT-TTF)(TCNQ) crystals. The temperature dependence of the source current with the applied positive gate voltage exhibits metal-like behavior at around room temperature. The metal-like conduction transforms into thermal-activation-type behavior below 240 K. The I-S-V-DS curve for an applied gate voltage of 80 V exhibited a corresponding change in the curvature below 240 K.

引用

页数：5

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