Effects of deposition conditions and annealing process on the infrared optical properties of diamond films grown by MPCVD

被引：0
作者：
Wang, LJ [1 ]
Xia, YB [1 ]
Zhang, ML [1 ]
Su, QF [1 ]
Gu, BB [1 ]
Lou, YY [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 200072, Peoples R China
来源：
FIFTH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 2004年 / 5774卷
关键词：
diamond film; optical properties; infrared spectroscopic ellipsometry (IRSE);
D O I：
10.1117/12.608045
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The effects of deposition conditions and annealing process on the optical properties of diamond films on silicon substrate grown by MPCVD method are investigated by infrared spectroscopic ellipsometry (2.5-12.5mum). Results indicate that the low nucleation temperature will be in favor of decreasing the infrared absorption at 3.5mum. The refractive index n of diamond films deposited under higher growth temperature will fluctuate weakly. After annealing in N-2 atmosphere an obvious improvement of the infrared optical properties is also found. After annealing the value of k was about 10(-12)similar to10(-15). However, for non-annealed diamond film, the value of k was about 10(-3)similar to10(-14). After annealing the refractive index n increased and was close to that of single crystal Type IIa natural diamond.
引用
收藏
页码：419 / 422
页数：4
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