Electrical Modeling and Analysis of Differential Dielectric-Cavity Through-Silicon via Array

被引：23
作者：
Liu, Xiaoxian [1 ]
Zhu, Zhangming [1 ]
Yang, Yintang [1 ]
Ding, Ruixue [1 ]
Li, Yuejin [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Xian 710071, Peoples R China
来源：
IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2017年 / 27卷 / 07期
基金：
中国国家自然科学基金;
关键词：
Differential dielectric-cavity through-silicon via (DDC-TSV) array; equivalent-circuit model; high-speed 3-D integrated circuits (3-D ICs); VIAS; PERFORMANCE; CIRCUITS;
D O I：
10.1109/LMWC.2017.2711563
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The parasitic parameters and equivalent electrical model of differential dielectric-cavity through-silicon via (DDC-TSV) array on traditional low-resistivity silicon (LRSi) are proposed in this letter. TSV plugs are placed in the dielectric-cavity etched on LRSi. Each analytical formula in the model is established as the fuction of various physical geometries. The resistance-inductance-capacitance-conductance model and S-parameters of the DDC-TSV array are constructed by the Advanced Design System (ADS), which is verified by the 3-D full-wave electromagnetic solver High Frequency Simulator Structure (HFSS). Simulation results of the ADS and HFSS accord well with each other with frequencies up to 100 GHz, which shows good accuracy of the proposed model.
引用
收藏
页码：618 / 620
页数：3
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