A simple metal-semiconductor substructure for the advanced thermo-mechanical numerical modeling of the power integrated circuits

The metallization of double-diffused metal-oxide semiconductor (DMOS) power devices, which operate under fast thermal cycling (FTC), undergoes thermal induced plastic metal deformation (TPMD). The design of the metallization has a significant impact on the device lifetime and thus requires a thorough understanding of the temperature, stress and strain distribution. A simple three-dimensional (3D) transistor substructure which is commonly found in various high integration Bipolar-CMOS-DMOS (BCD) technologies is analysed. The thermomechanical behaviour is studied with the finite element method (FEM) for investigation of two potential failure mechanisms: delamination of power metal and accumulation of plastic deformation in signal metallization layer (which leads to inter-metal dielectric cracking). These failure mechanisms are analysed on two versions of the structure: the first one has only signal and power metal lines and the second one has vias, in addition to the signal and power metal lines. The target of the paper is to propose an efficient finite element analysis (FEA) model that can be used for a qualitative assessment of thermo-mechanical phenomena in the metal system of high integration BCD technologies.