Saturation of optical gain in ZnSe heterostructures

被引：7

作者：

Kalt, H ^{[1
]}

Umlauff, M

Kraushaar, M

Scholl, M

Sollner, J

Heuken, M

机构：

[1] Univ Karlsruhe, Inst Angew Phys, D-76128 Karlsruhe, Germany

[2] Rhein Westfal TH Aachen, Inst Halbleitertech, D-52074 Aachen, Germany

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 184卷

关键词：

optical gain; saturation; variable stripe length method; pump-probe spectroscopy; ZnSe;

D O I：

10.1016/S0022-0248(97)00529-0

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The optical gain in ZnSe heterostructures is investigated by the variable stripe length method (VSLM). Saturation of the gain occurs due to the interaction of the carrier and photon densities which leads to an inhomogeneous electron-hole pair distribution along the excited stripe. This inhomogeneity is tested by spatially resolved pump-probe spectroscopy and compared to calculations based on a rate-equation model. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：627 / 631

页数：5

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