Optical and Dielectric Properties of Transparent Epitaxial GdVO4/n-GaN/Sapphire Heterostructure

被引：0

作者：

Jeong, Ye-Sul ^{[1
]}

Ahn, Kyun ^{[1
]}

Jeong, Se-Young ^{[1
]}

Yoon, Soon-Gil ^{[2
]}

Kim, Hyun-Gyu ^{[3
]}

Kim, Jong-Pil ^{[3
]}

Ahn, Hyeong-Soo ^{[4
]}

Kim, Hong-Seung ^{[4
]}

Cho, Chae-Ryong ^{[1
]}

机构：

[1] Pusan Natl Univ, Coll Nanosci & Nanotechnol, Miryang 627760, South Korea

[2] Chungnam Natl Univ, Sch Nano Sci & Technol, Taejon 305764, South Korea

[3] Korea Basic Sci Inst, Busan Ctr, Pusan 609735, South Korea

[4] Korea Maritime Univ, Dept Appl Sci, Pusan 606701, South Korea

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2010年 / 49卷 / 04期

关键词：

PULSED-LASER DEPOSITION; THIN-FILM; VANADATE CRYSTALS; ND-GDVO4; LASER; GAN SUBSTRATE; GROWTH; PHOSPHORS; GD;

D O I：

10.1143/JJAP.49.041101

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GdVO4 (GVO) thin films were successfully deposited on n-GaN/Al2O3 substrates used as a bottom electrode at 600 degrees C by radio frequency magnetron sputtering. The GVO films annealed at temperatures up to 800 degrees C exhibited epitaxial growth but the films annealed above 900 degrees C showed polycrystalline properties. In the photoluminescence (PL) spectrum, broadband emission was observed at 450 nm for all the films. The auger electron spectroscopy (AES) line-shape of the annealed films was similar to that of the as-deposited film but the Gd/V and Gd/O ratios increased linearly with increasing annealing temperature. The dielectric constant and dielectric loss of the GdVO4 films decreased with increasing annealing temperature with values of 12-26 and 0.04-0.05 at 1 MHz, respectively. (C) 2010 The Japan Society of Applied Physics

引用

页码：0411011 / 0411014

页数：4

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