Effect of stress on the Al composition evolution in AlGaN grown using metal organic vapor phase epitaxy

被引：7
|
作者：
He, Chenguang [1 ]
Qin, Zhixin [1 ]
Xu, Fujun [1 ]
Zhang, Lisheng [1 ]
Wang, Jiaming [1 ]
Hou, Mengjun [1 ]
Zhang, Shan [1 ]
Wang, Xinqiang [1 ,2 ]
Ge, Weikun [1 ]
Shen, Bo [1 ,2 ]
机构：
[1] Peking Univ, Sch Phys, State Key Lab Artificial Microstruct & Mesoscop P, Beijing 100871, Peoples R China
[2] Collaborat Innovat Ctr Quantum Matter, Beijing 100084, Peoples R China
来源：
APPLIED PHYSICS EXPRESS | 2016年 / 9卷 / 05期
基金：
国家高技术研究发展计划(863计划); 中国国家自然科学基金;
关键词：
ELECTRON-MOBILITY TRANSISTORS; ALN/ALGAN SUPERLATTICES; SAPPHIRE SUBSTRATE; MOVPE; HETEROSTRUCTURES; INTERFACE; ALLOYS;
D O I：
10.7567/APEX.9.051001
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Two series of AlGaN samples with different stresses were designed to investigate the effect of stress on the Al composition. X-ray diffraction reciprocal space mapping (XRD RSM) demonstrated that the AlGaN epilayers with different stresses have large Al composition differences despite the same growth conditions. The largest Al composition difference reached up to 21.3%, which was also confirmed using secondary ion mass spectroscopy (SIMS). This result is attributed to a large stress discrepancy in the AlGaN epilayers. Finally, the dependences of the solid-phase Al composition on the gas-phase Al composition under different stresses were systematically analyzed. (C) 2016 The Japan Society of Applied Physics
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页数：4
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