Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs

被引：86

作者：

Atanassova, E. ^{[1
]}

Paskaleva, A. ^{[1
]}

机构：

[1] Bulgarian Acad Sci, Inst Solid State Phys, BU-1784 Sofia, Bulgaria

来源：

MICROELECTRONICS RELIABILITY | 2007年 / 47卷 / 06期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/j.microrel.2006.06.006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The present status, successes, challenges and future of Ta2O5, and mixed Ta2O5-based high-k layers as active component in storage capacitors of nanoscale DRAMs are discussed. The engineering of new Ta2O5-based dielectrics (doped Ta205 and multicomponent Ta2O5-based high-k dielectrics) as well as of metal/high-k interface in MIM capacitor configuration are identified as critical factors for further reduction of EOT value below 1 nm. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：913 / 923

页数：11

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