Finding the reconstructions of semiconductor surfaces via a genetic algorithm

被引:50
作者
Chuang, FC
Ciobanu, CV
Shenoy, VB
Wang, CZ
Ho, KM
机构
[1] Colorado Sch Mines, Div Engn, Golden, CO 80401 USA
[2] Iowa State Univ, Ames Lab, US Dept Energy, Ames, IA 50011 USA
[3] Iowa State Univ, Dept Phys, Ames, IA 50011 USA
[4] Brown Univ, Div Engn, Providence, RI 02912 USA
基金
美国国家科学基金会;
关键词
surface relaxation and reconstruction; surface energy; genetic algorithm; semi-empirical models and model calculations; silicon;
D O I
10.1016/j.susc.2004.09.041
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
In this article we show that the reconstructions of semiconductor surfaces can be determined using a genetic procedure. Coupled with highly optimized interatomic potentials, the present approach represents an efficient tool for finding and sorting good structural candidates for further electronic structure calculations and comparison with scanning tunneling microscope (STM) images. We illustrate the method for the case of Si(1 0 5), and build a database of structures that includes the previously found low-energy models, as well as a number of novel configurations. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:L375 / L381
页数:7
相关论文
共 24 条
  • [1] A STABLE HIGH-INDEX SURFACE OF SILICON - SI(5 5 12)
    BASKI, AA
    ERWIN, SC
    WHITMAN, LJ
    [J]. SCIENCE, 1995, 269 (5230) : 1556 - 1560
  • [2] CHUANG FC, IN PRESS STRUCTURE S
  • [3] Reconstruction of silicon surfaces: A stochastic optimization problem
    Ciobanu, CV
    Predescu, C
    [J]. PHYSICAL REVIEW B, 2004, 70 (08): : 085321 - 1
  • [4] Structure and stability of the Si(105) surface
    Ciobanu, CV
    Shenoy, VB
    Wang, CZ
    Ho, KM
    [J]. SURFACE SCIENCE, 2003, 544 (2-3) : L715 - L721
  • [5] MOLECULAR-GEOMETRY OPTIMIZATION WITH A GENETIC ALGORITHM
    DEAVEN, DM
    HO, KM
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (02) : 288 - 291
  • [6] Origin of the stability of Ge(105) on Si: A new structure model and surface strain relaxation
    Fujikawa, Y
    Akiyama, K
    Nagao, T
    Sakurai, T
    Lagally, MG
    Hashimoto, T
    Morikawa, Y
    Terakura, K
    [J]. PHYSICAL REVIEW LETTERS, 2002, 88 (17) : 4 - 176101
  • [7] Major stable surface of silicon: Si(20423)
    Gai, Z
    Zhao, RG
    Li, WJ
    Fujikawa, Y
    Sakurai, T
    Yang, WS
    [J]. PHYSICAL REVIEW B, 2001, 64 (12)
  • [8] Atomic structure of the Ge(15 3 23) surface
    Gai, Z
    Li, XW
    Zhao, RG
    Yang, WS
    [J]. PHYSICAL REVIEW B, 1998, 57 (24) : 15060 - 15063
  • [9] Structures of medium-sized silicon clusters
    Ho, KM
    Shvartsburg, AA
    Pan, BC
    Lu, ZY
    Wang, CZ
    Wacker, JG
    Fye, JL
    Jarrold, MF
    [J]. NATURE, 1998, 392 (6676) : 582 - 585
  • [10] New structural model of the high-index Si(5512)2 x 1 surface
    Jeong, S
    Jeong, H
    Cho, S
    Seo, JM
    [J]. SURFACE SCIENCE, 2004, 557 (1-3) : 183 - 189