Single-electron tunneling effects in thin Nylon 11 films containing gold nanoparticles

被引：7
|
作者：
Inoue, Y
Fujii, M [1 ]
Inata, M
Hayashi, S
Yamamoto, K
Akamatsu, K
Deki, S
机构：
[1] Kobe Univ, Fac Engn, Dept Elect & Elect Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
[2] Kobe Univ, Fac Engn, Dept Sci & Chem Engn, Nada Ku, Kobe, Hyogo 6578501, Japan
来源：
THIN SOLID FILMS | 2000年 / 372卷 / 1-2期
基金：
日本学术振兴会;
关键词：
nanostructures; organic substances; gold nanoparticles;
D O I：
10.1016/S0040-6090(00)01032-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Very thin Nylon 11 films (less than or equal to 20 nm in thickness) containing Au nanoparticles were prepared, and current-voltage (I-V) characteristics in the vertical direction of the films were studied. The plan and cross-sectional transmission electron microscopic images revealed that Au particles are spontaneously aligned in the middle of the upper and lower electrodes and Nylon 11 tunneling barriers are naturally formed between Au nanoparticles and electrodes. Clear Coulomb staircases were observed in the I-V characteristics. (C) 2000 Elsevier Science S.A. All rights reserved.
引用
收藏
页码：169 / 172
页数：4
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