A Silicon Drift Detector-CMOS front-end system for high resolution X-ray spectroscopy up to room temperature

被引：32

作者：

Bertuccio, G. ^{[1
,2
]}

Ahangarianabhari, M. ^{[1
,2
]}

Graziani, C. ^{[1
]}

Macera, D. ^{[1
,2
]}

Shi, Y. ^{[1
,2
]}

Rachevski, A. ^{[3
]}

Rashevskaya, I. ^{[3
]}

Vacchi, A. ^{[3
]}

Zampa, G. ^{[3
]}

Zampa, N. ^{[3
]}

Bellutti, P. ^{[4
]}

Giacomini, G. ^{[4
]}

Picciotto, A. ^{[4
]}

Piemonte, C. ^{[4
]}

机构：

[1] Politecn Milan, Dept Elect Engn, I-22100 Como, Italy

[2] Ist Nazl Fis Nucl, Natl Inst Nucl Phys, I-20133 Milan, Italy

[3] Ist Nazl Fis Nucl, Natl Inst Nucl Phys, I-34149 Trieste, Italy

[4] Fdn Bruno Kessler, I-38123 Trento, Italy

来源：

JOURNAL OF INSTRUMENTATION | 2015年 / 10卷

关键词：

Solid state detectors; X-ray detectors; Analogue electronic circuits; Front-end electronics for detector readout;

D O I：

10.1088/1748-0221/10/01/P01002

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

A system constituted by a Silicon Drift Detector (SDD), fabricated with an innovative technology for minimizing the anode current, and a new CMOS charge sensitive preamplifier (CSA), designed for ultimate low noise performance, has been realized and experimentally characterized. The SDD is hexagonal with an active area of 13mm(2). The current density measured at the anode with the detector in operating condition is 25 pA/cm(2) at + 20 degrees C. The CSA - named SIRIO - has intrinsic Equivalent Noise Charge (ENC) ranging from 2.9 to 1.5 electrons r.m.s. at 0.8 mu s and 11 mu s peaking times at room temperature, respectively. With the SDD-SIRIO system at + 21 degrees C, an energy resolution of 141 eV FWHM on the Fe-55 line at 5.9 keV and 74 eV FWHM on the pulser line with a noise threshold of 170 eV have been measured at 0.8 mu s peaking time. The system has been tested from -30 degrees C to + 30 degrees C with energy resolution from 124 eV to 148 eV FWHM at 5.9 keV. A moderate cooling at + 10 degrees C is sufficient to reach 133 eV FWHM at 5.9 keV.

引用

页数：6

共 7 条

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